Gummel–Poon model

The Gummel–Poon model is a model of the bipolar junction transistor. It was first described in an article published by Hermann Gummel and H. C. Poon at Bell Labs in 1970.H. K. Gummel and H. C. Poon, "An integral charge control model of bipolar transistors", Bell Syst. Tech. J., vol. 49, pp. 827–852, May–June 1970.

The Gummel–Poon model and modern variants of it are widely used in popular circuit simulators such as SPICE. A significant effect that the Gummel–Poon model accounts for is the variation of the transistor and values with the direct current level. When certain parameters are omitted, the Gummel–Poon model reduces to the simpler Ebers–Moll model.

Model parameters

Spice Gummel–Poon model parametersSummary of model with schematics and equations.

#NamePropertymodeledParameterUnitsDefaultvalue1IScurrenttransport saturation currentA12BFcurrentideal max. forward beta—1003NFcurrentforward-current emission coefficient—14VAFcurrentforward early voltageV∞5IKFcurrentcorner for forward-beta high-current roll-offA∞6ISEcurrentB–E leakage saturation currentA07NEcurrentB–E leakage emission coefficient—1.58BRcurrentideal max. reverse beta—19NRcurrentreverse-current emission coefficient—110VARcurrentreverse early voltageV∞11IKRcurrentcorner for reverse-beta high-current roll-offA∞12ISCcurrentB–C leakage saturation currentA013NCcurrentB–C leakage emission coefficient—214RBresistancezero-bias base resistanceΩ015IRBresistancecurrent where base resistance falls half-way to its minimumA∞16RBMresistanceminimum base resistance at high currentsΩRB17REresistanceemitter resistanceΩ018RCresistancecollector resistanceΩ019CJEcapacitanceB–E zero-bias depletion capacitanceF020VJEcapacitanceB–E built-in potentialV0.7521MJEcapacitanceB–E junction exponential factor—0.3322TFcapacitanceideal forward transit times023XTFcapacitancecoefficient for bias dependence of TF—024VTFcapacitancevoltage describing VBC dependence of TFV∞25ITFcapacitancehigh-current parameter for effect on TFA026PTFexcess phase at frequency = 1/(2π TF)°027CJCcapacitanceB–C zero-bias depletion capacitanceF028VJCcapacitanceB–C built-in potentialV0.7529MJCcapacitanceB–C junction exponential factor—0.3330XCJCcapacitancefraction of B–C depletion capacitance connected to internal base node—131TRcapacitanceideal reverse transit times032CJScapacitancezero-bias collector–substrate capacitanceF033VJScapacitancesubstrate–junction built-in potentialV0.7534MJScapacitancesubstrate–junction exponential factor—035XTBforward- and reverse-beta temperature exponent—036EGenergy gap for temperature effect of ISeV1.137XTItemperature exponent for effect of IS—338KFflicker-noise coefficient—039AFflicker-noise exponent—140FCcoefficient for forward-bias depletion capacitance formula—0.541TNOMparameter measurement temperature°C27

Gummel–Poon model

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