The Paul Rappaport Award is awarded by the IEEE Electron Devices society. It was established 1984 to commemorate the late American physicist Paul Rappaport and their accomplishments. The criteria is the best paper appearing in a fast turn around archival publication of the IEEE Electron Devices Society. The award is given the award annually and is presented presented at the IEEE EDS International Electron Devices Meeting.
Recipients The past recipients are: +YearRecipient(s)Paper1982R. Fabian Pease David B. TuckermanHigh-Performance Heat Sinking for VLS1983Jaroslav HynecekElectron-Hole Recombination Antiblooming for Virtual-Phase CCD Imager1984Shojiro Asai Norikazu Hashimoto Kiyoo Itoh Tokuo Kure Hideo Sunami Toru ToyabeA Corrugated Capacitor Cell (CCC)1985Roger Epworth Linus A. Fetter Richard E. Howard Lawrence D. Jackel Paul M. Mankiewich Kristan S. Ralls William J. Skocpol Donald M. TennantSingle electron switching events in nanometer-scale Si MOSFET's1986Ben T. Ebihara Peter RaminsImprovements in MDC and TWT overall efficiency through the application of carbon electrode surfaces1987Richard B. TrueEmittance and the design of beam formation, transport, and collection systems in periodically focused TWT's1988Diane R. Ahrendt Yeou-Chong Vladimir F. Drobny Valdis E. Garuts Robert D. Herman Eric E. Lane June S. Lee Evan E. Patton Tadanori Yamaguchi Simon Yu Todd H. YuzurihaProcess and device performance of a high-speed double poly-Si bipolar technology using borosenic-poly process with coupling-base implant1989James F. Gibbons Judy L. Hoyt Clifford A. KingBandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors1990Khalil Najafi Kenichiro Suzuki Kensall D. WiseA 1024-element high-performance silicon tactile imager1991Hiroshi Fukuda Akira Imai Shinji Okazaki Tsuneo TerasawaNew approach to resolution limit and advanced image formation techniques in optical lithography1992April S. Brown Linda M. Jelloian Loi D. Nguyen Mark A. Thompson50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors1993Hisashi Hara Hiroshi Iwai Toyota Morimoto Masakatsu TsuchiakiA new charge pumping method for determining the spatial distribution of hot-carrier-induced fixed charge in p-MOSFETs1994Takashi Hashimoto Tomoyuki Ishii Takashi Kobayashi Fumio Murai Koichi Seki Kazuo YanoRoom-temperature single-electron memory1995Herbert Lifka Ger M. Paulzen Henk G. Pomp Pierre H. Woerlee Reinout WoltjerThree Hot-Carrier Degradation Mechanisms in Deep-Submicron PMOSFETS1996Chris J. Diorio Paul E. Hasler Carver A. Mead Bradley A. MinchA Single-Transistor Silicon Synapse1997Dimitri A. Antoniadis Anantha P. Chandrakasan Carlin J. Vieri Isabel Y. YangBack-Gated CMOS on SOIAS For Dynamic Threshold Voltage Control1998Yujun Li Tso-Ping MaiA Front-Gate Charge-Pumping Method for Probing Both Interfaces in SOI Devices1999Pallab Bhattacharya Kishore K. Kamath Jasprit Singh David Klotzkin Jamie Phillips Hong-Tao Jiang Nalini Chervela Theodore B. Norris Tom Sosnowski Joy Laskar M. Ramana MurtyIn (Ga)As/GaAs Self-Organized Quantum Dot Lasers: DC and Small-Signal Modulation Properties2000Didier Dutartre Malgorzata Jurczak Damien Lenoble Jose Martins Stephanie Monfray Roland Pantel M. Paoli Jorge Luis Regolini Pascal Ribot Thomas Skotnicki Beatrice TormenSilicon-on-Nothing (SON)--an Innovative Process for Advanced CMOS2001Ioannis Kymissis Christos D. Dimitrakopoulos Sampath PurusothamanHigh Performance Bottom Electrode Organic Thin-Film TransistorsRaymond M. Warner, Jr.Microelectronics: Its Unusual Origin and Personality2002Yee Chia Yeo Vivek Subramanian Jakub Kedzierski Peiqi Xuan Tsu-Jae King Jeffrey Bokor Chenming HuDesign & Fabrication of 50-nm Thin-Body p-MOSFETS with a Silicon-Germanium Heterostructure Channel2003Ken Uchida Junji Koga Ryuji Ohba Akira ToriumiProgrammable Single-Electron Transistor Logic for future Low-Power Intelligent LSI : Proposal and Room-Temperature Operation2004Franco Stellari Peilin Song James C. Tsang Moyra K. McManus Mark B. KetchenTesting and Diagnostics of CMOS Circuits Using Light Emission from Off-State Leakage Current2005Kailash Gopalakrishnan Peter B. Griffin James D. Plummer Raymond Wood Christoph JungemannImpact Ionization MOS (I-MOS) - Part I: Device and Circuit Simulations and Part II: Experimental Results2006Billy Lau Alfred Forchel Lukas Worschech David HartmannCascaded Quantum Wires and Integrated Design for Complex Logic Functions: Nanoelectronic Full Adder2007Azad Naeemi James D. MeindlDesign and Performance Modeling for Single-Walled Carbon Nanotubes as Local, Semiglobal, and Global Interconnects in Gigascale Integrated Systems2008Kah-Wee Ang Jian Qiang Lin Ganesh S. Samudra Shih-Hang Tung Narayanan Balasumbramanian Yee-Chia YeoStrained n-MOSFET With Embedded Source/Drain Stressors and Strain-Transfer Structure (STS) for Enhanced Transistor Performance2009Takao Someya Tsuyoshi Sekitani Koichiro Zaitsu Yoshiaki Noguchi Kiyoshiro Ishibe Makoto Takamiya Takayasu SakuraiPrinted Nonvolatile Memory for a Sheet-Type Communication System2010Yusaku Kato Tsuyoshi Sekitani Yoshiaki Noguchi Tomoyuki Yokota Makoto Takamiya Takayasu Sakurai Takao SomeyaLarge-Area Flexible Ultrasonic Imaging System With an Organic-Transistor Active Matrix2011Tibor Grasser Ben Kaczer Wolfgang Goes Hans Reisinger Thomas Aichinger Philipp Hehenberger Paul-Jürgen Wagner Franz Schanovsky Jacopo Franco María Toledano Luque Michael NelhiebelThe Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps2012Kelin KuhnConsiderations for Ultimate CMOS Scaling2013Rui Zhang Po-Chin Huang Ju-Chin Lin Noriyuki Taoka Mitsuru Takenaka Shinichi TakagiasHigh-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Postoxidation2014Sylvain Barraud Jean-Michel Hartmann Virginie Maffini-Alvaro Lucie Tosti Vincent Delaye Dominique LafondTop-Down Fabrication of Epitaxial SiGe/Si Multi-(Core/Shell) p-FET Nanowire Transistors2015Stefano Ambrogio Simone Balatti Vincent McCaffrey Daniel C. Wang Daniele IelminiNoise-Induced Resistance Broadening in Resistive Switching Memory Part I: Intrinsic Cell Behavior / Part II: Array Statistics2016Takatoshi Tsujimura Takeshi Hakii Suguru NodaA Color-Tunable Polychromatic Organic-Light-Emitting-Diode Device With Low Resistive Intermediate Electrode for Rollto-Roll Manufacturing2017L. Witters, H. Arimura, F. Sebaai, A. Hikavyy, A. P. Milenin, R. Loo, A. De Keersgieter, G. Eneman, T. Schram, K. Wostyn, K. Devriendt, A. Schulze, R. Lieten, S. Bilodeau, E. Cooper, P. Storck, E. Chiu, C. Vrancken, P. Favia, E. Vancoille, J. Mitard, R. Langer, A. Opdebeeck, F. Holsteyns, N. Waldron, K. Barla, V. De Heyn, D. Mocuta, and N. CollaertStrained Germanium Gate-All-Around pMOS Device Demonstration Using Selective Wire Release Etch Prior to Replacement Metal Gate Deposition2018Konstantin Osipov, Joachim Wuerfl, Ina Ostermay, Frank Brunner, Günther Tränkle and Maniteja BodduluriLocal 2DEG Density Control in Heterostructures of Piezoelectric Materials and Its Application in GaN HEMT Fabrication Technology2019Kihyun Choi, Hyun Chul Sagong, Wonchang Kang, Hyunjin Kim, Jiang Hai, Miji Lee, Bomi Kim, Mi-ji Lee, Soonyoung Lee, Hyewon Shim, Junekyun Park, YoungWoo Cho, Hwa Sung Rhee and Sangwoo PaeEnhanced Reliability of 7nm Process Technology Featuring EUV2020Kangguo Cheng, Chanro Park, Heng Wu, Juntao Li, Son Nguyen, Jingyun Zhang, Miaomiao Wang, Sanjay Mehta, Zuoguang Liu, Richard Conti, Nicholas J. Loubet, Julien Frougier, Andrew Greene, Tenko Yamashita, Balasubramanian Haran and Rama DivakaruniImproved Air Spacer for Highly Scaled CMOS Technology2021Jixuan Wu, Fei Mo, Takuya Saraya, Toshiro Hiramoto, Mototaka Ochi, Hiroshi Goto and Masaharu KobayashiMonolithic Integration of Oxide Semiconductor FET and Ferroelectric Capacitor Enabled by Sn-Doped InGaZnO for 3-D Embedded RAM Application2022Akshay M. Arabhavi, Filippo Ciabattini, Sara Hamzeloui, Ralf Flückiger, Tamara Saranovac, Daxin Han, Diego Marti, Giorgio Bonomo, Rimjhim Chaudhary, Olivier Ostinelli, and Colombo R. BolognesiInP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With fMAX = 1.2 THz2023Weiyi Li, Brian Romanczyk, Matthew Guidry, Emre Akso, Nirupam Hatui, Christian Wurm, Wenjian Liu, Pawana Shrestha, Henry Collins, Christopher Clymore, Stacia Keller, and Umesh K. Mishra Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs
See also Paul Rappaport
References