Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS () is a research institute in Akademgorodok of Novosibirsk, Russia. It was founded in 1964.
History The institute was created in 1964 by merging the Institute of Solid State Physics and Semiconductor Electronics and the Institute of Radiophysics and Electronics.From electron to photon: ISP SB RAS is 55 years old. Novosti Sibirskoy Nauki. От электрона к фотону: ИФП СО РАН — 55 лет. Новости сибирской науки. May 14, 2019. In the 1970s, the institute began to work on developing molecular-beam epitaxy methods.
Scientific activity Development of the physical fundamentals of microelectronics, acousto-electronics, microphotoelectronics, quantum electronics; the study of physical phenomena in semiconductor thin-film structures etc.Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS. Siberian Branch of the Russian Academy of Sciences.
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