Igor Serafimovich Tashlykov (June 4, 1946 – June 7, 2016) was a Soviet and Belarusian physicist, who was awarded the Doctor of Physical and Mathematical Sciences degree (1989). He was a member of the Belarusian Physical Society (1995). He carried out research at the Research Institute of Applied Physical Problems (APP) of the Belarusian State University (1972-1989 - Senior Researcher), the Belarusian State Technological University (1989-2003 - Professor), the Maxim Tank Belarusian State Pedagogical University (BSPU) (2003-2007 - Dean of the Faculty of Physics; 2007-2013 - Head of the Department of General Physics; 2013-2016 - Professor of Physics and Methods of Teaching Physics).
Tashlykov was an expert in the field of the surface modification of solids using ion-beam technologies.Ф.Ф.Комаров, М.А.Кумахов, И.С.Ташлыков. Неразрушающий анализ поверхностей твердых тел ионными пучками. Мн., изд-во Университетское,1987, 256 с. In solid-state electronics, he developed criteria for controlling the transformation of the structure of ion-implanted gallium arsenide and silicon that were based on calculations of the energy density released in the elastic processes of cascade collisions of atomic nuclei. He also developed methods for modifying solids by atomic mixing and ion-assisted deposition of coatings. Tashlykov developed the theory for, and carried out experimental studies in connection with, the ion-assisted deposition of thin films.Ташлыкоў Ігар Серафімавіч / Я. Г. Міляшкевіч // Беларуская энцыклапедыя : 18 т. — Мінск, 2002. — Т. 15. — С. 466.Ташлыков Игорь Серафимович // Республика Беларусь : энциклопедия : [в 7 т.]. — Минск, 2008. — Т. 7. — С. 189—190.
Tashlykov received an Award from the President of Belarus for outstanding contributions to the social and economic development of the Republic in 2012. He also founded a research group devoted to the study of the physical characteristics and properties of the surfaces of materials such as metals, semiconductors, and elastomers. He was the author of three monographs published in Belarus and in the United States.
Biography
Tashlykov was born in North Korea to Serafim Dmitrievich Tashlykov, a pilot, and Nina Semenovna Tashlykova a nurse, whilst they were stationed there with the Soviet armed forces before he moved to Babruysk in 1952. He moved to Minsk with his parents in 1962 and finished secondary school No. 27 in 1964 with a silver medal before entering the Belarusian State University to study physics, graduating in 1969 with honors from the Physics Faculty with a specialization in solid state physics. He then started full-time postgraduate study before transferring to correspondence postgraduate study in 1970 whilst working as a junior researcher in the laboratory of experimental physics and physical electronics of the BSU. In 1971 he transferred to the Elionics Laboratory within the Research Institute of Applied Physical Problems (APP) at BSU. He became a senior researcher in 1972 and was awarded the degree of Candidate of Sciences in 1973 based on his thesis Investigation of radiation effects in bismuth and its alloys. In 1976 he became a senior research fellow before completing his doctoral thesis on the subject Modification and study of structure in crystals with different types of bonds (Si, GaAs and Ni) by nuclear physical methods at Kharkov State University in 1989.
After receiving his doctoral thesis he worked in the Department of Physics at the Belarusian Institute of Technology, later renamed into the Belarusian Technological University, until 2003, becoming a professor in 1992. In 2003, at the invitation of the rector of the Maxim Tank Belarusian State Pedagogical University, Kukharchik Petr Dmitrievich, he went to work as the Dean of the Physical Faculty. He was Head of the Department of Experimental Physics from 2007 and Professor of the Department of Physics and Methods of Teaching Physics from 2013.
June 7, 2016, died of stroke in Minsk. He was buried in the honorary lot No. 114 of the columbarium of the Eastern (Moscow) cemetery in Minsk.
Scientific activity Tashlykov was primarily focused on the modification of the structure and properties of solids using ion-beam and ion-plasma methods and technologies. This included the study of physical and chemical processes occurring during the interaction of accelerated ions with elastomers as well as the formation of thin film (coating) / substrate systems.
Postgraduate studies Tashlykov began his scientific work by studying radiation defects in bismuth and its alloys in 1969 under the guidance of Georgy Alexandrovich Humansky and Valery Ivanovich Prokoshin. Due to a lack of radiation sources samples were irradiated on a microtron at the Physical Institute of Academy of Sciences (PIAS) of the USSR and a U-120 cyclotron in Kiev at the Institute for Nuclear Research of the Academy of Sciences of the Ukrainian SSR. As a result of successful work Tashlykov was recommended for a one-year internship at the Department of Ionometry of the University of Jena in East Germany in 1971–1972 where he studied protonography and ionometry, later called spectroscopy of Rutherford backscattering (RBS) ions in combination with their channeling. It was later noted that Tashlykov was among the first Soviet scientists who held the years experiments in 1971-1972 using ion channeling for layer-by-layer analysis of radiation damages in single crystals.
These results were the basis for the development of the method of calculating the concentration of radiation defects in irradiated single crystals, using the method of ionometry, taking into account the multiple scattering of channeled helium ions.Reports of the USSR Academy of Sciences, 217 (1974) 1277-1280Reports of the Academy of Sciences of the BSSR, XVII (1973) 797-800 On September 25, 1973, Tashlykov defended his Ph.D. thesis on "The study of radiation effects in bismuth and its alloys" in the BSU.
Work at the Belarusian State University
At Belarusian State University Tashlykov started studying radiation disturbances in bismuth and its alloys by nuclear physical methods. Tashlykov initiated the creation of a research complex of nuclear physical methods on the basis of the ESU-2 electrostatic accelerator of horizontal type in the Belarusian State University in 1975–1979. This legendary accelerator number 2, built shortly after the World War II in the laboratories of Kharkov Institute of Physics and Technology, was used in the 1960s and 1970s as an electron accelerator at Lebedev Physical Institute. With the assistance of the director of the Research Institute of the APP, Academician of the Academy of Sciences of Belarus, A.N. Sevchenko, head of the semiconductor laboratory Academician, B. M. Vul passed this accelerator to Belarus.
Organization of a new research center based on ESU-2, the reconstruction of the accelerator (the creation of a high-frequency ion source and its control systems), the logistic support (transmission of a target chamber equipped with a two-axis precision goniometer) of the elionics laboratory was greatly assisted by well-known specialists: L.I. Pivovar (KPTI), G.M. Osetinsky and I.A. Chepurchenko from the Joint Institute for Nuclear Research (Dubna), as well as Tashlykov's colleague and friend Hardwig Treff of the University of Jena.
From the beginning of the 1970s research work began in the BSU under the guidance of G. A. Gumansky on the tasks identified by the State Committee on Science and Technology of the Council of Ministers of the USSR associated with ion-beam synthesis of double and triple connections of optoelectronics materials. This research led to active international cooperation, in particular carrying out research at the University of Jena in 1971–1972, 1973, 1975, and 1977.
In 1977, at the International Conference on Atomic Collisions in Solids (ICACS) at the Moscow State University, Tashlykov became acquainted with John A. Davies from Chalk River Nuclear Laboratories and George Carter of the University of Salford in Manchester.
In 1979-1980 John A. Davis invited Tashlykov to undertake a traineeship at the McMaster University and the Chalk River Nuclear Laboratories in Canada during which time he studied defect formation in gallium arsenide during implantation of Nitrogen, Aluminium, Phosphorus, Arsenic, and Antimony ions under varied conditions. Using the Rutherford backscattering (RBS), the distribution profiles of the implanted As, Sb were established using the nuclear reaction of aluminum profiles in gallium arsenide. These results, as well as the results of studies of the modification of the catalytic properties of nickel electrodes for water alkaline electrolysis for the production of hydrogen, formed the basis for his doctoral dissertation and additional information was obtained about the mechanisms of formation of radiation damage and phase reconstruction of the structure in gallium arsenide under ion irradiation, the influence of ion current density on these processes, the energy density released in the cascade of atomic collisions, the type of ions, and the irradiation temperature.
The results of the studies in Canada of ion implantation into electrodes used in alkali electrolysis for the production of hydrogen and oxygen were reported by Tashlykov at the Kurchatov Institute. In the early 1980s financing was provided to develop technical regulations for ion implantation of metal catalysts and other ions which led to the generation of 5 copyright certificates for creating active and corrosion-resistant electrodes.
Tashlykov was appointed to the Coordination Group on the methods of fast nuclear analysis of the Council of the USSR Academy of Sciences (later the Russian Academy of Sciences) on the application of methods of nuclear physics in related fields and to the Coordination Group of Electrostatic Accelerators in the Council of the Academy of Sciences of the USSR (Section of accelerators of direct action and sources of charged particles) headed by V. A. Romanov (Obninsk Institute of Physics and Power Engineering). At the invitation of Spartak Belyaev he consulted the method of spectroscopy of Rutherford backscattering and ion channeling in the Department of Nuclear Physics of the Institute of Atomic Energy in 1987–1988. The developed regulations for ion-beam synthesis and doping of semiconductor crystals were introduced at the enterprises of the Ministry of Electronics Industry in 1987 and the USSR radio industry in 1988. The regulations for the creation of anodes of catalytically active and corrosion-resistant anodes for water-alkali electrolysis by the implantation of Ag+ ions into Ni, the use of which provides for a 10% reduction in energy costs per unit of production, were transferred to the organizations of Ministry of Chemical Industry and the USSR Academy of Sciences. The economic effect amounted to 180 thousand soviet rubles. The invaluable assistance was rendered during this period of research using nuclear-physical methods by the head of the Accelerators Laboratory of the Research Institute of Nuclear Physics of Moscow State University, candidate of physical and mathematical sciences, Laureate of the State Prize of the USSR V.S. Kulikauskas.