Indium arsenide antimonide phosphide () is a semiconductor material.
InAsSbP has been used as blocking layers for semiconductor laser structures, as well as for the mid-infrared light-emitting diodes and lasers, photodetectors and thermophotovoltaic cells.
InAsSbP layers can be grown by heteroepitaxy on indium arsenide, gallium antimonide and other materials.
See also Aluminium gallium indium phosphide Gallium indium arsenide antimonide phosphide
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