The International Conference on Nitride Semiconductors (ICNS) is a major academic conference and exhibition in the field of group III nitride research. It has been held biennially since 1995. Since the second conference in 1997, hosting of the event has rotated between the Asian and the European continent and the United States of America. The ICNS and the International Workshop on Nitride Semiconductors (IWN) are held in alternating years, both covering similar subject areas.

ICNS-9 was held at the Scottish Exhibition and Conference Centre in Glasgow, Scotland, on 10–15 July 2011. Keynote speakers included Professor Umesh Mishra (University of California Santa Barbara and Transphorm) and Professor Hiroshi Amano (Meijo University, Nagoya). ICNS-10 was held in Washington, D.C., United States on 25–30 August 2013, ICNS-11 was held in Beijing, China 30 August–4 September 2015 and ICNS-12 was held in Strasbourg, France on 24–28 July 2017.

ICNS-13 was held 7-12 July 2019 in Seattle, Washington, United States, and was chaired by Alan Doolittle (Georgia Institute of Technology, USA)

The ICNS-14 was held in Fukuoka, Japan, from 12-17 November 2023. The conference had a total number of 1241 participants. 424 oral presentations were given and 407 posters presented. Plenary talks were given by Hiroshi Amano (Nagoya University, Japan), Debdeep Jena (Cornell University, USA), Elison Matioli (EPFL, Switzerland), Takashi Mukai (Nichia Corp, Japan), Åsa Haglund (Chalmers University of Technology, Sweden), Aurélien David (Google, USA), Ken Nakata (Sumitomo Electric Industries Ltd., Japan).

The ICNS-15 will be held in Malmö, Sweden from 6-11 July 2025. ICNS-15 will present high-impact scientific and technological advances in materials and devices based on group-III nitride semiconductors, and feature plenary sessions, parallel topical sessions, poster sessions and an industrial exhibition. ICNS-15 will celebrate the achievements of Profs. Bo Monemar and Tadek Suski as honorary chairs. Conference chairs are Vanya Darakchieva (Lund University), Piotr Perlin (Center for High Pressure Research at the Polish Academy of Sciences (Unipress), Warsaw, Poland) and Lars Samuelson (Lund University, Sweden and Southern University of Science and Technology (SUSTech), Shenzhen, China).

Conference list Conference name Location DatesICNS-15 Malmö, Sweden6-11 July 2025ICNS-14 Fukuoka, Japan12-17 November 2023ICNS-13 Bellevue, Washington, Seattle’s Eastside, United States7–12 July 2019ICNS-12 Strasbourg, France24–28 July 2017 ICNS-11G. Zhang, B. Shen, G. Zhang, T. Yu, N. Tang, X. Yang and S. Li (2016), "Preface: Nitride Semiconductors" Physica Status Solidi C 13 (5–6) 177–180 Beijing, China 30 August – 4 September 2015 ICNS-10J. A. Freitas, C. Wetzel, C. R. Eddy and A. Khan (2014), "Preface: Nitride Semiconductors" Physica Status Solidi C 11 (3–4) 370–372 Washington D.C., United States 25–30 August 2013 ICNS-9P. J. Parbrook, R. W. Martin and M. P. Halsall (2012) "Preface: Phys. Status Solidi C 3–4/2012" Physica Status Solidi C 9 (3–4) 430–432 Glasgow, UK 10–15 July 2011 ICNS-8S.-J. Park (2010) "Preface: Phys. Status Solidi C 7/7-8" Physica Status Solidi C 7 (7-8) 1737–1742 Jeju, Korea 18–23 October 2009 ICNS-7S. Nakamura, U. Mishra, S. DenBaars, J. S. Speck, M. Wraback, Y. Arakawa, A. Allerman, N. Grandjean, J. Shealy, M. Krames, T. Palacios and D. Jena (2008) "Preface: phys. stat. sol. (c) 5/6" Physica Status Solidi C 5 1472–1474 Las Vegas, United States 16–21 September 2007 ICNS-6 Bremen, Germany 28 August – 2 September 2005 ICNS-5H. Amano and T. Udagawa (2003) "Preface: phys. stat. sol. (c) 0/7" Physica Status Solidi C 0 1977 Nara, Japan 25–30 May 2003 ICNS-4Proceedings of 4th International Conference on Nitride Semiconductors (2002): Part A Physica Status Solidi A 188 (1–2); Part B Physica Status Solidi B 228 (1–2) Denver, United States 16–20 July 2001 ICNS-3Article title Montpellier, France 4–9 July 1999 ICNS-2A. Mills (1998) "ICNS-2 charts GaN's progress" III-Vs Review 11 (1) 44–49 Tokushima, Japan 27–31 October 1997 TWN'95Topical Workshop on III-V Nitrides Nagoya, Japan 21–23 September 1995

See also Gallium nitride Indium nitride Aluminium nitride Boron nitride (hexagonal form)

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