Silicon photonics is the study and application of photonic systems which use silicon as an optical medium. The silicon is usually patterned with sub-micrometre precision, into microphotonic components. These operate in the infrared, most commonly at the 1.55 micrometre wavelength used by most fiber optic telecommunication systems. The silicon typically lies on top of a layer of silica in what (by analogy with a similar construction in microelectronics) is known as silicon on insulator (SOI).
Silicon photonic devices can be made using existing semiconductor fabrication techniques, and because silicon is already used as the substrate for most integrated circuits, it is possible to create hybrid devices in which the optical and electronic components are integrated onto a single microchip. Consequently, silicon photonics is being actively researched by many electronics manufacturers including IBM and Intel, as well as by academic research groups, as a means for keeping on track with Moore's Law, by using optical interconnects to provide faster data transfer both between and within microchips.
The propagation of light through silicon devices is governed by a range of nonlinear optical phenomena including the Kerr effect, the Raman effect, two-photon absorption and interactions between photons and free charge carriers. The presence of nonlinearity is of fundamental importance, as it enables light to interact with light, thus permitting applications such as wavelength conversion and all-optical signal routing, in addition to the passive transmission of light.
Silicon waveguides are also of great academic interest, due to their unique guiding properties, they can be used for communications, interconnects, biosensors, and they offer the possibility to support exotic nonlinear optical phenomena such as soliton propagation.
Applications
Optical communications In a typical optical link, data is first transferred from the electrical to the optical domain using an electro-optic modulator or a directly modulated laser. An electro-optic modulator can vary the intensity and/or the phase of the optical carrier. In silicon photonics, a common technique to achieve modulation is to vary the density of free charge carriers. Variations of electron and hole densities change the real and the imaginary part of the refractive index of silicon as described by the empirical equations of Soref and Bennett. Modulators can consist of both forward-biased PIN diodes, which generally generate large phase-shifts but suffer of lower speeds, as well as of reverse-biased p–n junctions. A prototype optical interconnect with microring modulators integrated with germanium detectors has been demonstrated. Non-resonant modulators, such as Mach-Zehnder interferometers, have typical dimensions in the millimeter range and are usually used in telecom or datacom applications. Resonant devices, such as ring-resonators, can have dimensions of only tens of micrometers, therefore occupying much smaller areas. In 2013, researchers demonstrated a resonant depletion modulator that can be fabricated using standard Silicon-on-Insulator Complementary Metal-Oxide-Semiconductor (SOI CMOS) manufacturing processes. A similar device has been demonstrated as well in bulk CMOS rather than in SOI.
On the receiver side, the optical signal is typically converted back to the electrical domain using a semiconductor photodetector. The semiconductor used for carrier generation usually had a band-gap smaller than the photon energy, and the most common choice is pure germanium. Most detectors use a p–n junction for carrier extraction, however, detectors based on metal–semiconductor junctions (with germanium as the semiconductor) have been integrated into silicon waveguides as well. More recently, silicon-germanium avalanche photodiodes capable of operating at 40 Gbit/s have been fabricated. Complete transceivers have been commercialized in the form of active optical cables.
Optical communications are conveniently classified by the reach, or length, of their links. The majority of silicon photonic communications have so far been limited to telecom and datacom applications, where the reach is of several kilometers or several meters respectively.
Silicon photonics, however, is expected to play a significant role in computercom as well, where optical links have a reach in the centimeter to meter range. In fact, progress in computer technology (and the continuation of Moore's Law) is becoming increasingly dependent on faster data transfer between and within microchips. Optical interconnects may provide a way forward, and silicon photonics may prove particularly useful, once integrated on the standard silicon chips. In 2006, Intel Senior Vice President - and future CEO - Pat Gelsinger stated that, "Today, optics is a niche technology. Tomorrow, it's the mainstream of every chip that we build." In 2010 Intel demonstrated a 50 Gbit/s connection made with silicon photonics.
The first microprocessor with optical input/output (I/O) was demonstrated in December 2015 using an approach known as "zero-change" CMOS photonics. This is known as fiber-to-the-processor. This first demonstration was based on a 45 nm SOI node, and the bi-directional chip-to-chip link was operated at a rate of 2×2.5 Gbit/s. The total energy consumption of the link was calculated to be of 16 pJ/b and was dominated by the contribution of the off-chip laser.
Some researchers believe an on-chip laser source is required. Others think that it should remain off-chip because of thermal problems (the quantum efficiency decreases with temperature, and computer chips are generally hot) and because of CMOS-compatibility issues. One such device is the hybrid silicon laser, in which the silicon is bonded to a different semiconductor (such as indium phosphide) as the lasing medium. Other devices include all-silicon Raman laser or an all-silicon Brillouin lasers wherein silicon serves as the lasing medium.
In 2012, IBM announced that it had achieved optical components at the 90 nanometer scale that can be manufactured using standard techniques and incorporated into conventional chips. In September 2013, Intel announced technology to transmit data at speeds of 100 gigabits per second along a cable approximately five millimeters in diameter for connecting servers inside data centers. Conventional PCI-E data cables carry data at up to eight gigabits per second, while networking cables reach 40 Gbit/s. The latest version of the USB standard tops out at ten Gbit/s. The technology does not directly replace existing cables in that it requires a separate circuit board to interconvert electrical and optical signals. Its advanced speed offers the potential of reducing the number of cables that connect blades on a rack and even of separating processor, storage and memory into separate blades to allow more efficient cooling and dynamic configuration.
Graphene photodetectors have the potential to surpass germanium devices in several important aspects, although they remain about one order of magnitude behind current generation capacity, despite rapid improvement. Graphene devices can work at very high frequencies, and could in principle reach higher bandwidths. Graphene can absorb a broader range of wavelengths than germanium. That property could be exploited to transmit more data streams simultaneously in the same beam of light. Unlike germanium detectors, graphene photodetectors do not require applied voltage, which could reduce energy needs. Finally, graphene detectors in principle permit a simpler and less expensive on-chip integration. However, graphene does not strongly absorb light. Pairing a silicon waveguide with a graphene sheet better routes light and maximizes interaction. The first such device was demonstrated in 2011. Manufacturing such devices using conventional manufacturing techniques has not been demonstrated.Orcutt, Mike (2 October 2013) "Graphene-Based Optical Communication Could Make Computing More Efficient . MIT Technology Review.
Optical routers and signal processors Another application of silicon photonics is in signal routers for optical communication. Construction can be greatly simplified by fabricating the optical and electronic parts on the same chip, rather than having them spread across multiple components. A wider aim is all-optical signal processing, whereby tasks which are conventionally performed by manipulating signals in electronic form are done directly in optical form. An important example is all-optical switching, whereby the routing of optical signals is directly controlled by other optical signals. Another example is all-optical wavelength conversion.
In 2013, a startup company named "Compass-EOS", based in California and in Israel, was the first to present a commercial silicon-to-photonics router.
Long range telecommunications using silicon photonics Silicon microphotonics can potentially increase the Internet's bandwidth capacity by providing micro-scale, ultra low power devices. Furthermore, the power consumption of datacenters may be significantly reduced if this is successfully achieved. Researchers at Sandia, Kotura, NTT, Fujitsu and various academic institutes have been attempting to prove this functionality. A 2010 paper reported on a prototype 80 km, 12.5 Gbit/s transmission using microring silicon devices.
Light-field displays As of 2015, US startup company Magic Leap is working on a light-field chip using silicon photonics for the purpose of an augmented reality display.
Artificial intelligence Silicon photonics has been used in artificial intelligence inference processors that are more energy efficient than those using conventional transistors. This can be done using Mach-Zehnder interferometers (MZIs) which can be combined with nanoelectromechanical systems to modulate the light passing through it, by physically bending the MZI which changes the phase of the light.
Multilayer integration architectures Silicon photonic integrated circuits have been developed using a variety of integration architectures to improve device density, optical routing, and functional complexity. In addition to planar waveguide layouts, researchers have investigated three-dimensional integration techniques that employ vertically stacked photonic layers to overcome scaling limitations associated with conventional photonic integrated circuits. These approaches complement other integration strategies, including heterogeneous integration and advanced photonic packaging.
Monolithic multilayer photonic integration
Monolithic multilayer photonic integration (MPI) is a three-dimensional approach to silicon photonics in which optical components are fabricated in multiple vertically stacked layers rather than on a single planar waveguide layer.
The approach seeks to overcome routing congestion and waveguide crossings in planar photonic integrated circuits. More importantly, it offers efficient utilization of wafer area. The relatively large size of optical waveguides—hundreds of nanometers, compared to few-nanometer feature size of electronic components—poses an economic challenge. The real estate on the most advanced CMOS nodes are too expensive for relatively large footprint of photonic devices. Monolithic 3D integration may solve this problem as well as leading to more compact optical transceivers for dense interconnects in GPU clusters in AI datacenters.